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| Si5856DC Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 5.9 5.6 5.2 rDS(on) (W) 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on) Ultra Low VF Schottky Si5853DC Pin Compatible Pb-free Available APPLICATIONS D Buck Rectifier Switch, Buck-Boost D Synchronous Rectifier or Load D Switch For Portable Devices SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V @ 1.0 IF (A) 1.0 1206-8 ChipFETr K 1 A K K D D A S G D Marking Code JD XXX Lot Traceability and Date Code Part # Code G S N-Channel MOSFET A Bottom View Ordering Information: SI5856DC-T1 SI5856DC-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec 20 20 "8 5.9 4.2 20 1.8 1.0 7 2.1 1.1 1.9 1.0 Steady State Unit V 4.4 3.1 0.9 A 1.1 0.6 1.1 0.56 -55 to 150 260 _C W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72234 S-50366--Rev. C, 28-Feb-05 www.vishay.com 1 Si5856DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 5 sec Junction-to-Ambienta J ti t A bi t Steady St t St d State Device MOSFET Schottky MOSFET Schottky MOSFET Schottky Symbol Typical 50 54 Maximum 60 65 110 115 40 40 Unit RthJA 90 95 _C/W Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Steady State RthJF 30 30 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.4 A Drain Source On State Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS = 2.5 V, ID = 4.1 A VGS = 1.8 V, ID = 1.9 A VDS = 10 V, ID = 4.4 A IS = 1.0 A, VGS = 0 V 20 0.032 0.036 0.042 22 0.8 1.2 0.040 0.045 0.052 S V W 0.4 1.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 4.4 A , , 5 0.85 1 20 36 30 12 45 30 55 45 20 90 ns 7.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 IF = 1.0, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.34 0.255 0.05 2 10 90 Max 0.375 0.290 0.500 20 100 Unit V Maximum Reverse Leakage Current Junction Capacitance www.vishay.com Irm CT mA pF 2 Document Number: 72234 S-50366--Rev. C, 28-Feb-05 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 TC = -55_C 25_C MOSFET Transfer Characteristics 12 1.5 V 12 125_C 8 8 4 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 800 700 C - Capacitance (pF) 0.08 600 500 400 300 200 VGS = 4.5 V 100 0.00 0 4 8 12 16 20 0 0 Crss 4 Capacitance Ciss 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 Coss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 4.4 A rDS(on) - On-Resiistance (Normalized) 4 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.4 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Document Number: 72234 S-50366--Rev. C, 28-Feb-05 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 MOSFET On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 4.4 A 0.06 ID = 2 A 0.04 TJ = 150_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 -0.1 -0.2 -0.3 -0.4 -50 10 Power (W) 30 50 Single Pulse Power 40 20 -25 0 25 50 75 100 125 150 0 10-4 10-3 10-2 10-1 Time (sec) 1 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area IDM Limited *rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 72234 S-50366--Rev. C, 28-Feb-05 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R - Reverse Current (mA) 1 0.1 0.01 0.001 20 V 10 V I F - Forward Current (A) 10 SCHOTTKY Forward Voltage Drop 1 TJ = 150_C TJ = 25_C 0.0001 -50 -25 0 25 50 75 100 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (_C) Document Number: 72234 S-50366--Rev. C, 28-Feb-05 VF - Forward Voltage Drop (V) www.vishay.com 5 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 600 500 400 300 200 100 0 0 4 8 12 16 20 SCHOTTKY Capacitance CT - Junction Capacitance (pF) VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72234. www.vishay.com Document Number: 72234 S-50366--Rev. C, 28-Feb-05 6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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